SI1013X-T1 Vishay/Siliconix, SI1013X-T1 Datasheet - Page 5

• Manufacturer Part Number: SI1013X-T1
• Description: MOSFET 20V 0.35A 0.25W
• Manufacturer: Vishay/Siliconix

Specifications of SI1013X-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.35 A
• Resistance Drain-source Rds (on): 1.2 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-89-3
• Fall Time: 9 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 250 mW
• Rise Time: 9 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 35 ns

TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see www.vishay.com/ppg?71167.
Document Number: 71167
S10-2432-Rev. D, 25-Oct-10
0.01
0.1
2
1
10
-4
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
A
= 25 °C, unless otherwise noted)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si1013R/X
www.vishay.com
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