SI4501ADY-T1 Vishay/Siliconix, SI4501ADY-T1 Datasheet - Page 4

• Manufacturer Part Number: SI4501ADY-T1
• Description: MOSFET 30/8V 8.8/5.7A 1.3W
• Manufacturer: Vishay/Siliconix

Specifications of SI4501ADY-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V, 8 V
• Gate-source Breakdown Voltage: +/- 20 V, +/- 8 V
• Continuous Drain Current: 8.8 A, 5.7 A
• Resistance Drain-source Rds (on): 18 mOhms, 42 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 8 ns at N Channel, 45 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.3 W
• Rise Time: 8 ns at N Channel, 45 ns at P Channel
• Factory Pack Quantity: 2500
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 35 ns at N Channel, 60 ns at P Channel

Si4501ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
100
0.4
0.2
0.0
10
1
- 50
0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
T
J
J
= 150 °C
I
25
D
- Temperature (°C)
= 250 µA
0.6
50
75
0.8
0.01
T
100
0.1
10
J
1
100
= 25 °C
0.1
* V
1.0
Limited by R
125
GS
Single Pulse
T
A
V
= 25 °C
1.2
minimum V
DS
150
- Drain-to-Source Voltage (V)
Safe Operating Area
DS(on)*
1
GS
at which R
10
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
100
80
60
40
20
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
2
100
V
0.01
GS
- Gate-to-Source Voltage (V)
I
D
4
= 8.8 A
Time (s)
S09-0868-Rev. D, 18-May-09
0.1
Document Number: 71922
6
1
8
10
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