SI4501ADY-T1 Vishay/Siliconix, SI4501ADY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4501ADY-T1
• Description: MOSFET 30/8V 8.8/5.7A 1.3W
• Manufacturer: Vishay/Siliconix

Specifications of SI4501ADY-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V, 8 V
• Gate-source Breakdown Voltage: +/- 20 V, +/- 8 V
• Continuous Drain Current: 8.8 A, 5.7 A
• Resistance Drain-source Rds (on): 18 mOhms, 42 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 8 ns at N Channel, 45 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.3 W
• Rise Time: 8 ns at N Channel, 45 ns at P Channel
• Factory Pack Quantity: 2500
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 35 ns at N Channel, 60 ns at P Channel

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71922
S09-0868-Rev. D, 18-May-09
0.05
0.04
0.03
0.02
0.01
0.00
40
32
24
16
8
0
6
5
4
3
2
1
0
0
0
0
V
I
D
DS
V
= 8.8 A
GS
On-Resistance vs. Drain Current
V
= 15 V
2
GS
3
6
= 10 V thru 5 V
V
DS
Q
= 4.5 V
Output Characteristics
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
12
4
6
4 V
18
6
9
3 V
V
GS
= 10 V
12
24
8
10
15
30
2000
1600
1200
800
400
1.6
1.4
1.2
1.0
0.8
0.6
40
32
24
16
8
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
- 25
rss
V
I
D
GS
C
= 8.8 A
oss
= 10 V
1
6
V
DS
0
T
V
Transfer Characteristics
C
J
GS
- Drain-to-Source Voltage (V)
iss
- Junction Temperature (°C)
- Gate-to-Source Voltage
25
Capacitance
12
2
50
Vishay Siliconix
T
C
Si4501ADY
18
= - 55 °C
3
75
25 °C
100
www.vishay.com
24
4
125 °C
125
150
30
5
3