SI1405DL-T1 Vishay/Siliconix, SI1405DL-T1 Datasheet - Page 4

• Manufacturer Part Number: SI1405DL-T1
• Description: MOSFET 8V 1.8A
• Manufacturer: Vishay/Siliconix

Specifications of SI1405DL-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.6 A
• Resistance Drain-source Rds (on): 0.21 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 36 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 568 mW
• Rise Time: 36 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 33 ns

Si1405DL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71073.
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
- 50
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 25
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
T
0
Single Pulse
Single Pulse
J
- Junction Temperature (°C)
Threshold Voltage
25
10
-3
I
D
50
10
= 250 µA
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
-2
125
150
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
10
10
1
8
6
4
2
0
10
-1
-2
Single Pulse Power, Junction-to-Ambient
10
1
-1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
– T
Time (s)
t
1
1
A
S10-0935-Rev. C, 19-Apr-10
= P
t
2
Document Number: 71073
DM
1
Z
thJA
thJA
100
t
t
1
2
(t)
= 180 °C/W
10
6
1
0
0
0
30