SI1405DL-T1 Vishay/Siliconix, SI1405DL-T1 Datasheet

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SI1405DL-T1

Manufacturer Part Number
SI1405DL-T1
Description
MOSFET 8V 1.8A
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI1405DL-T1

Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.6 A
Resistance Drain-source Rds (on)
0.21 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Fall Time
36 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
568 mW
Rise Time
36 ns
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
33 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1405DL-T1
Manufacturer:
VISHAY
Quantity:
51 000
Part Number:
SI1405DL-T1
Manufacturer:
STM
Quantity:
5 569
Part Number:
SI1405DL-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI1405DL-T1-E3
Manufacturer:
ATMEL
Quantity:
1 844
Part Number:
SI1405DL-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Note:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71073
S10-0935-Rev. C, 19-Apr-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 8
(V)
0.125 at V
0.160 at V
0.210 at V
R
DS(on)
J
a
= 150 °C)
a
GS
GS
GS
G
D
D
Ordering Information: Si1405DL-T1-E3 (Lead (Pb)-free)
= - 4.5 V
= - 2.5 V
= - 1.8 V
(Ω)
P-Channel 1.8 V (G-S) MOSFET
1
2
3
SC-70 (6-LEADS)
a
SOT-363
Top View
a
A
Si1405DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
= 25 °C, unless otherwise noted
I
± 1.8
± 1.6
± 1.4
D
Steady State
6
5
4
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 5 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
D
D
S
Marking Code
OB XX
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
Part # Code
R
R
Definition
J
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
Lot Traceability
and Date Code
®
Power MOSFET: 1.8 V Rated
Typical
0.625
0.400
± 1.8
± 1.5
- 0.8
165
180
105
5 s
- 55 to 150
± 8
± 5
- 8
Steady State
Maximum
0.568
0.295
± 1.6
± 1.2
- 0.8
200
220
130
Vishay Siliconix
Si1405DL
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI1405DL-T1 Summary of contents

Page 1

... Compliant to RoHS Directive 2002/95/EC ± 1.4 SOT-363 6 D Marking Code Lot Traceability and Date Code 4 S Part # Code Top View Si1405DL-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° °C A ...

Page 2

... Si1405DL Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71073 S10-0935-Rev. C, 19-Apr-10 1000 °C J 0.8 1.0 1.2 Si1405DL Vishay Siliconix C iss 800 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 ...

Page 4

... Si1405DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.3 0 250 µA D 0.1 0.0 - 0 Junction Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

- - Document Number: 71154 06-Jul-01 Package Information Dim Min Nom Max A 0.90 – A – – 0.80 ...

Page 6

... INTRODUCTION This technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for single-channel LITTLE FOOT power MOSFETs in the SC-70 package. These new Vishay Siliconix devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 350 mA) need to be switched, either directly or by using a level shift configuration ...

Page 7

AN813 Vishay Siliconix THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the 3-pin SC-70 measured as junction-to-foot thermal resistance is 285_C/W typical, 340_C/W maximum. Junction-to-foot thermal resistance for the 6-pin SC70-6 is 105_C/W typical, 130_C/W maximum — ...

Page 8

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead Return to Index Return to Index www.vishay.com 18 0.067 (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72602 Revision: 21-Jan-08 ...

Page 9

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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