BSP225 T/R NXP Semiconductors, BSP225 T/R Datasheet - Page 9

• Manufacturer Part Number: BSP225 T/R
• Description: MOSFET P-CH DMOS 250V 225MA
• Manufacturer: NXP Semiconductors

Specifications of BSP225 T/R

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.225 A
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 108 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 1500 mW
• Rise Time: 108 ns
• Factory Pack Quantity: 1000
• Typical Turn-off Delay Time: 185 ns
• Part # Aliases: BSP225,115

Philips Semiconductors
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
Data sheet status
Objective specification
Preliminary specification
Product specification
Application information
Where application information is given, it is advisory and does not form part of the specification.
P-channel enhancement mode vertical
D-MOS transistor
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
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Product specification
BSP225