BSP225 T/R NXP Semiconductors, BSP225 T/R Datasheet - Page 3

• Manufacturer Part Number: BSP225 T/R
• Description: MOSFET P-CH DMOS 250V 225MA
• Manufacturer: NXP Semiconductors

Specifications of BSP225 T/R

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.225 A
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 108 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 1500 mW
• Rise Time: 108 ns
• Factory Pack Quantity: 1000
• Typical Turn-off Delay Time: 185 ns
• Part # Aliases: BSP225,115

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain lead minimum 6 cm
THERMAL RESISTANCE
Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain lead minimum 6 cm
April 1995
P
T
T
R
SYMBOL
SYMBOL
V
V
I
I
stg
j
tot
th j-a
P-channel enhancement mode vertical
D-MOS transistor
D
DM
DS
GSO
from junction to ambient (note 1)
drain-source voltage
gate-source voltage
drain current
drain current
total power dissipation
storage temperature range
junction temperature
PARAMETER
PARAMETER
3
open drain
DC value
peak value
up to T
amb
CONDITIONS
= 25 C (note 1)
83.3
MIN.
65
VALUE
Product specification
250
20
225
600
1.5
150
150
BSP225
MAX.
K/W
UNIT
V
V
mA
mA
W
UNIT
C
C
2
2
.
.