SI4860DY-T1 Vishay/Siliconix, SI4860DY-T1 Datasheet - Page 4
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SI4860DY-T1
Manufacturer Part Number
SI4860DY-T1
Description
MOSFET 30V 16A 1.6W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI4860DY-T1.pdf
(8 pages)
Specifications of SI4860DY-T1
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Resistance Drain-source Rds (on)
8 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
12 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.6 W
Rise Time
12 ns
Factory Pack Quantity
2500
Tradename
TrenchFET
Typical Turn-off Delay Time
46 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4860DY-T1-E3
Manufacturer:
VISHAY
Quantity:
5 416
Company:
Part Number:
SI4860DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 945
Part Number:
SI4860DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4860DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4860DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71752.
www.vishay.com
4
- 0.3
- 0.6
- 0.9
0.6
0.3
0.0
0.01
0.01
0.1
- 50
0.1
2
1
2
1
10
10
- 4
- 4
0.05
- 25
0.02
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0
Threshold Voltage
T
I
D
J
= 250 µA
10
25
- Temperature (°C)
Single Pulse
- 3
50
10
- 3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Normalized Thermal Transient Impedance, Junction-to-Foot
10
100
- 2
125
Square Wave Pulse Duration (s)
150
10
Square Wave Pulse Duration (s)
- 2
10
- 1
200
160
120
10
80
40
1
0
0.001
- 1
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
DM
JM
- T
Time (s)
t
1
1
A
= P
0.1
t
2
S0-0221-Rev. D, 09-Feb-09
DM
Document Number: 71752
Z
thJA
thJA
100
t
t
1
2
(t)
= 67 °C/W
1
600
10
10