SI4860DY-T1 Vishay/Siliconix, SI4860DY-T1 Datasheet - Page 3
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SI4860DY-T1
Manufacturer Part Number
SI4860DY-T1
Description
MOSFET 30V 16A 1.6W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI4860DY-T1.pdf
(8 pages)
Specifications of SI4860DY-T1
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Resistance Drain-source Rds (on)
8 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
12 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.6 W
Rise Time
12 ns
Factory Pack Quantity
2500
Tradename
TrenchFET
Typical Turn-off Delay Time
46 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4860DY-T1-E3
Manufacturer:
VISHAY
Quantity:
5 416
Company:
Part Number:
SI4860DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 945
Part Number:
SI4860DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4860DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71752
S0-0221-Rev. D, 09-Feb-09
0.015
0.012
0.009
0.006
0.003
0.000
60
10
6
5
4
3
2
1
0
1
0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
On-Resistance vs. Drain Current
0.2
= 16 A
10
= 15 V
4
V
SD
Q
T
g
J
- Source-to-Drain Voltage (V)
0.4
- Total Gate Charge (nC)
= 150 °C
I
V
D
GS
Gate Charge
- Drain Current (A)
20
8
= 4.5 V
0.6
12
30
0.8
T
J
V
= 25 °C
GS
40
16
= 10 V
1.0
1.2
20
50
0.040
0.032
0.024
0.016
0.008
0.000
2500
2000
1500
1000
2.00
1.75
1.50
1.25
1.00
0.75
0.50
500
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
- 25
V
I
D
rss
GS
= 16 A
= 10 V
6
2
V
V
DS
GS
0
T
C
J
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
Capacitance
25
12
4
C
50
Vishay Siliconix
iss
18
6
75
Si4860DY
I
D
= 16 A
www.vishay.com
100
24
8
125
150
10
30
3