SI7403DN-T1 Vishay/Siliconix, SI7403DN-T1 Datasheet - Page 4

• Manufacturer Part Number: SI7403DN-T1
• Description: MOSFET 20V 4.5A 3.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI7403DN-T1

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.9 A
• Resistance Drain-source Rds (on): 100 mOhms at 4.5 V
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 17 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1500 mW
• Rise Time: 17 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 52 ns

Si7403DN
Vishay Siliconix
www.vishay.com
4
–0.1
–0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.01
–50
0.1
0.1
2
1
2
1
10
10
–4
–4
–25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Single Pulse
I
D
= 250 mA
0
0.02
T
Threshold Voltage
J
0.05
– Temperature (_C)
25
10
Single Pulse
–3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
75
10
–3
100
10
–2
_
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
New Product
10
–1
10
–2
1
50
40
30
20
10
0
0.01
Single Pulse Power, Juncion-To-Ambient
0.1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
–1
JM
– T
Time (sec)
t
A
1
1
= P
t
2
DM
Z
thJA
thJA
100
t
t
S-03390—Rev. A, 02-Apr-01
1
2
10
(t)
Document Number: 71431
= 68_C/W
100
600
1
600