SI7403DN-T1 Vishay/Siliconix, SI7403DN-T1 Datasheet - Page 2

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SI7403DN-T1

Manufacturer Part Number
SI7403DN-T1
Description
MOSFET 20V 4.5A 3.5W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI7403DN-T1

Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.9 A
Resistance Drain-source Rds (on)
100 mOhms at 4.5 V
Configuration
Single Quad Drain Triple Source
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK 1212-8
Fall Time
17 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1500 mW
Rise Time
17 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
52 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7403DN-T1-E3
Manufacturer:
IDT
Quantity:
4 000
Part Number:
SI7403DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7403DN
Vishay Siliconix
Notes
a.
b.
www.vishay.com
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20
16
12
8
4
0
0
b
Parameter
1
V
DS
a
a
Output Characteristics
– Drain-to-Source Voltage (V)
a
2
a
V
GS
= 4.5, 4, 3.5 V
3 V
3
_
2.5 V
1.5 V
2 V
Symbol
V
r
I
DS(on)
t
I
t
I
GS(th)
D(on)
V
Q
Q
d(off)
4
d(on)
GSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
_
5
New Product
V
I
DS
D
V
^ –1.6 A, V
DS
= –10 V, V
I
F
= –20 V, V
V
V
V
V
V
V
V
V
V
= –1.6 A, di/dt = 100 A/ms
V
DS
DS
GS
GS
I
DS
DS
S
DS
DD
DD
Test Condition
DS
= –1.6 A, V
= –5 V, V
= –5 V, V
= V
= –4.5 V, I
= –2.5 V, I
= –10 V, I
= –20 V, V
= –10 V, R
= –10 V, R
= 0 V, V
GS
GEN
GS
GS
, I
= –4.5 V, I
D
= –4.5 V, R
= 0 V, T
GS
GS
GS
D
= –250 mA
D
D
GS
GS
L
L
= –3.3 A
= –3.3 A
= –2.9 A
= –4.5 V
= –2.5 V
= "4.5 V
= 10 W
= 10 W
= 0 V
= 0 V
20
16
12
J
D
8
4
0
= 70_C
G
= –4.5 A
0
= 6 W
V
GS
Transfer Characteristics
1
–0.45
Min
– Gate-to-Source Voltage (V)
–10
–4
T
C
= –55_C
0.078
2
0.110
Typ
8.8
0.8
8.6
1.5
3.1
27
17
52
45
50
S-03390—Rev. A, 02-Apr-01
Document Number: 71431
"100
Max
0.135
–1.2
0.1
3
–1
–5
14
50
30
80
70
80
125_C
25_C
Unit
nA
m
mA
nC
ns
V
A
W
W
S
V
4

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