SI3458DV-T1 Vishay/Siliconix, SI3458DV-T1 Datasheet - Page 3
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SI3458DV-T1
Manufacturer Part Number
SI3458DV-T1
Description
MOSFET 60V 3.2A 2W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI3458DV-T1.pdf
(9 pages)
Specifications of SI3458DV-T1
Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.2 A
Resistance Drain-source Rds (on)
0.1 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP-6
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
2 W
Rise Time
10 ns
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
20 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3458DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70859
S09-0765-Rev. E, 04-May-09
0.20
0.16
0.12
0.08
0.04
0.00
15
12
10
9
6
3
0
8
6
4
2
0
0
0
0
V
I
V
D
DS
GS
= 3.2 A
On-Resistance vs. Drain Current
= 30 V
= 4.5 V
3
V
1
DS
2
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
6
V
2
4
GS
V
= 10 V thru 5 V
GS
9
= 10 V
6
3
12
4 V
3 V
15
4
8
600
500
400
300
200
100
2.0
1.6
1.2
0.8
0.4
15
12
9
6
3
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 3.2 A
10
= 10 V
1
V
V
Transfer Characteristics
T
GS
0
DS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
20
25
Capacitance
C
2
oss
T
C
25 °C
50
= 125 °C
30
Vishay Siliconix
C
iss
3
75
Si3458DV
40
- 55 °C
www.vishay.com
100
4
50
125
150
60
5
3