SI3458DV-T1 Vishay/Siliconix, SI3458DV-T1 Datasheet
SI3458DV-T1
Specifications of SI3458DV-T1
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SI3458DV-T1 Summary of contents
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... GS TSOP-6 Top View 2.85 mm Ordering Information: Si3458DV-T1-E3 (Lead (Pb)-free) Si3458DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Silngle Avalanche Current a,b Maximum Power Dissipation ...
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... Si3458DV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...
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... Q - Total Gate Charge (nC) g Gate Charge Document Number: 70859 S09-0765-Rev. E, 04-May- thru Si3458DV Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... Si3458DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 250 µA D 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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TSOP: 5/6−LEAD JEDEC Part Number: MO-193C 5-LEAD TSOP D 0.08 C Dim ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 Document Number: 71200 18-Dec- 0.15 M ...
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... Surface mounted power MOSFET packaging has been based on integrated circuit and small signal packages. Those packages have been modified to provide the improvements in heat transfer required by power MOSFETs. Leadframe materials and design, molding compounds, and die attach materials have been changed. What has remained the same is the footprint of the packages ...
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AN823 Vishay Siliconix 140 − 170_C 3_C/s (max) FIGURE 3. Solder Reflow Temperature and Time Durations THERMAL PERFORMANCE A basic measure of a device’s thermal performance is the junction-to-case thermal resistance, junction-to-foot thermal resistance, Rq measured for the device mounted ...
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Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR TSOP-6 Return to Index Return to Index www.vishay.com 26 0.099 (2.510) 0.039 0.020 0.019 (1.001) (0.508) (0.493) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72610 Revision: 21-Jan-08 ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...