VS-ST333S08PFL0P Vishay Semiconductors, VS-ST333S08PFL0P Datasheet - Page 7

• Manufacturer Part Number: VS-ST333S08PFL0P
• Description: SCRs 800 Volt 330 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST333S08PFL0P

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 11520 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Forward Voltage Drop: 1.96 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-118
• Factory Pack Quantity: 6

Document Number: 94377
Revision: 30-Apr-08
1E4
1E3
1E2
1E1
1E 5
1E 4
1E 3
1E 2
1E 1
1E1
1E1
3000
2500
tp
2000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
0.2
1E2
1E 2
1500
0.3
S T 333S S eries
S inusoidal pulse
0.5
1000
1
2
100
0.1
10
3
0.001
500
1
5
tp
10
a) R ec ommended load line for
Rec tangular gate pulse
b) Recommended load line for
400
20 joules p er pulse
<=30% rated di/ dt : 10V, 10ohms
tr<=1 µs
rated di/ dt : 20V, 10ohms; tr<=1 µs
1E3
1E3
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
For technical questions, contact: [e-mail]
S T 333S S eries
T rapezoid al pulse
T = 50°C
di/ dt = 100A/ µs
200
C
S nub ber circ uit
R = 10 ohms
C
V = 80% V
s
s
D
= 0.47 µF
100
Inverter Grade Thyristors
0.01
VGD
50 Hz
(Stud Version), 330 A
IGD
DRM
Fig. 13 - Frequency Characteristics
1E4
1E4
1E 4
1E 4
Device: S T 333S S eries
Fig. 15 - Gate Characteristics
Instantaneous Gate Current (A)
0.1
(b)
(a)
1
1E 1
1E1
Frequency Limited by PG(AV)
1E1
1E1
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
tp
3000
Vishay High Power Products
2500
S T 333S S eries
Rectangular pulse
d i/ dt = 50A/ µs
2000
10
(1)
Pulse Basewidth (µs)
Pulse Basewidth (µs)
1E2
1E2
1500
(2)
0.2
1000
0.3
0.4
(3)
0.5
ST333SP Series
500
(4)
1
100
2
400
tp
3
5
1E3
1E3
200
10
20 joules p er pulse
S T 333S S eries
T rapezoidal pulse
T = 75°C
di/ dt = 100A/ µs
C
S nub ber c irc uit
R = 10 ohms
C = 0.47 µF
V = 80% V
100
s
s
D
50 Hz
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DRM
1E4
1E 4
7