VS-ST333S08PFL0P Vishay Semiconductors, VS-ST333S08PFL0P Datasheet - Page 2

• Manufacturer Part Number: VS-ST333S08PFL0P
• Description: SCRs 800 Volt 330 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST333S08PFL0P

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 11520 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Forward Voltage Drop: 1.96 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-118
• Factory Pack Quantity: 6

ST333SP Series
Vishay High Power Products
www.vishay.com
2
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
Voltage before turn-on V
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state
current at case temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
2
2
t for fusing
√t for fusing
R
D
For technical questions, contact: [e-mail]
840
650
430
140
50
SYMBOL
180° el
V
V
I
I
T(RMS)
I
T(AV)
V
T(TO)1
T(TO)2
TSM
10/0.47
I
I
r
r
I
I
2
2
TM
t1
t2
Inverter Grade Thyristors
H
L
V
t
√t
50
DRM
50
(Stud Version), 330 A
600
450
230
60
75
I
TM
180° conduction, half sine wave
DC at 63 °C case temperature
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
I
t
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
T
T
TM
p
J
J
= 10 ms sine wave pulse
= 25 °C, I
= 25 °C, V
= 1810 A, T
T(AV)
T(AV)
1280
1280
1090
T
), T
), T
490
A
50
> 30 A
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
= 12 V, R
J
J
J
180° el
TEST CONDITIONS
= T
= T
= T
10/0.47
V
< I < π x I
< I < π x I
J
50
DRM
J
J
-
maximum,
maximum
maximum
RRM
RRM
a
= 6 Ω, I
1040
910
730
250
I
75
TM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
), T
), T
G
= 1 A
J
J
J
= T
= T
= T
5430
2150
1080
J
J
J
400
50
maximum
maximum
maximum
100 µs
10/0.47
V
50
DRM
-
Document Number: 94377
4350
1560
720
190
I
75
TM
VALUES
11 000
11 520
Revision: 30-Apr-08
9250
9700
6050
1000
1.96
0.91
0.92
0.58
0.58
330
518
605
550
430
390
600
75
UNITS
Ω/µF
A/µs
°C
UNITS
A
V
kA
kA
mΩ
mA
°C
A
A
V
2
2
s
√s