VS-ST333S08PFL0P Vishay Semiconductors, VS-ST333S08PFL0P Datasheet - Page 4

• Manufacturer Part Number: VS-ST333S08PFL0P
• Description: SCRs 800 Volt 330 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST333S08PFL0P

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 11520 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Forward Voltage Drop: 1.96 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-118
• Factory Pack Quantity: 6

ST333SP Series
Vishay High Power Products
Note
• The table above shows the increment of thermal resistance R
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4
ΔR
CONDUCTION ANGLE
thJ-hs
CONDUCTION
130
120
110
100
180°
120°
90°
60°
30°
90
80
70
Fig. 1 - Current Ratings Characteristics
0
50
Average On-state Current (A)
S T 333S S eries
R
100 150 200
thJC
30°
500
450
400
350
300
250
200
150
100
50
(DC) = 0.10 K/ W
0
60°
0
SINUSOIDAL CONDUCTION
Conduc tion Angle
90°
RMS Limit
50
Average On-state Current (A)
180°
120°
90°
60°
30°
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250 300 350
120°
100
0.011
0.013
0.017
0.025
0.041
Fig. 3 - On-State Power Loss Characteristics
150
180°
Inverter Grade Thyristors
200
(Stud Version), 330 A
Conduction Angle
S T 333S S eries
T = 125°C
J
250
thJ-hs
300
when devices operate at different conduction angles than DC
RECTANGULAR CONDUCTION
350
25
Maximum Allowable Ambient T emperature (°C)
50
0.008
0.014
0.018
0.026
0.042
130
120
110
100
75
90
80
70
60
0
Fig. 2 - Current Ratings Characteristics
100
Average On-state Current (A)
100
30°
S T 333S S eries
R
200
thJC
60°
TEST CONDITIONS
90°
125
T
(DC) = 0.10 K/ W
J
120°
300
= T
Conduc tion Period
180°
J
Document Number: 94377
maximum
400
DC
Revision: 30-Apr-08
500
600
UNITS
K/W