SI4876DY-E3 Vishay/Siliconix, SI4876DY-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4876DY-E3
• Description: MOSFET 20V 21A 3.6W
• Manufacturer: Vishay/Siliconix

Specifications of SI4876DY-E3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 21 A
• Resistance Drain-source Rds (on): 5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 30 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.6 W
• Rise Time: 30 ns
• Factory Pack Quantity: 100
• Typical Turn-off Delay Time: 175 ns

Si4876DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71312.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.0
0.4
0.2
0.01
0.01
- 50
0.1
0.1
2
1
2
1
10
10
-4
-4
- 25
0.02
0.05
0.05
Duty Cycle = 0.5
0.02
Duty Cycle = 0.5
0.2
0.1
0.2
0.1
0
Single Pulse
Threshold Voltage
I
T
D
J
= 250 µA
25
- Temperature (°C)
10
-3
50
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
-2
125
150
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
60
50
40
30
20
10
0
10
10
1
-1
-2
10
-1
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
- T
Time (s)
t
1
A
1
S09-0221-Rev. F, 09-Feb-09
= P
t
2
Document Number: 71312
DM
Z
10
thJA
thJA
100
t
t
1
2
(t)
= 67 °C/W
100
10
600
600