SI4876DY-E3 Vishay/Siliconix, SI4876DY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4876DY-E3
• Description: MOSFET 20V 21A 3.6W
• Manufacturer: Vishay/Siliconix

Specifications of SI4876DY-E3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 21 A
• Resistance Drain-source Rds (on): 5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 30 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.6 W
• Rise Time: 30 ns
• Factory Pack Quantity: 100
• Typical Turn-off Delay Time: 175 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71312
S09-0221-Rev. F, 09-Feb-09
0.010
0.008
0.006
0.004
0.002
0.000
10
50
10
8
6
4
2
0
1
0
0
0
V
I
Source-Drain Diode Forward Voltage
D
20
DS
On-Resistance vs. Drain Current
0.2
= 21 A
10
= 10 V
T
V
J
SD
Q
= 150 °C
40
g
- Source-to-Drain Voltage (V)
0.4
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
20
60
0.6
80
30
T
J
= 25 °C
0.8
100
V
V
GS
GS
40
= 2.5 V
= 4.5 V
1.0
120
1.2
140
50
0.020
0.015
0.010
0.005
0.000
8000
6000
4000
2000
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
rss
V
I
- 25
D
GS
= 21 A
= 4.5 V
4
1
V
V
DS
GS
T
0
C
J
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
Capacitance
8
2
C
50
Vishay Siliconix
iss
I
D
12
3
75
= 21 A
Si4876DY
www.vishay.com
100
16
4
125
150
20
5
3