SUB75P03-08-E3 Vishay/Siliconix, SUB75P03-08-E3 Datasheet

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SUB75P03-08-E3

Manufacturer Part Number
SUB75P03-08-E3
Description
MOSFET 30V 75A 250W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SUB75P03-08-E3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Resistance Drain-source Rds (on)
7 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Fall Time
80 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
3.75 W
Rise Time
16 ns
Factory Pack Quantity
800
Tradename
TrenchFET
Typical Turn-off Delay Time
140 ns
Notes:
a.
b.
c.
d.
Document Number: 70772
S-05111—Rev. D, 10-Dec-99
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
(T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient
Junction-to-Case
J
Package limited.
Duty cycle v 1%.
When mounted on 1” square PCB (FR-4 material).
See SOA curve for voltage derating.
= 175_C)
V
(BR)DSS
–30
TO-220AB
SUP75P03-08
Top View
G D S
(V)
b
DRAIN connected to TAB
r
P-Channel 30-V (D-S), 175_C MOSFET
DS(on)
Parameter
0.008
Parameter
(W)
T
C
PCB Mount (TO-263)
= 25_C (TO-220AB and TO-263)
Free Air (TO-220AB)
T
A
= 25_C (TO-263)
T
I
L = 0.1 mH
T
D
–75
C
C
(A)
= 125_C
= 25_C
a
_
SUB75P03-08
c
Top View
TO-263
G
c
D
S
Symbol
R
R
R
thJA
thJA
thJC
Symbol
T
J
V
E
I
I
P
, T
DM
I
AR
GS
AR
D
D
stg
SUP/SUB75P03-08
Limit
62.5
0.6
40
P-Channel MOSFET
–55 to 175
Vishay Siliconix
G
Limit
–200
"20
–75
250
–65
–75
280
3.7
a
d
S
D
www.vishay.com
Unit
_C/W
Unit
mJ
_C
W
V
A
1

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SUB75P03-08-E3 Summary of contents

Page 1

... Symbol T = 25_C 125_C 0 25_C (TO-220AB and TO-263 25_C (TO-263) A Symbol c PCB Mount (TO-263) R thJA Free Air (TO-220AB) R thJA R thJC SUP/SUB75P03-08 Vishay Siliconix P-Channel MOSFET Limit " – –65 I –200 DM I – 280 AR d 250 ...

Page 2

... SUP/SUB75P03-08 Vishay Siliconix _ Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reversen Transfer Capacitance c Total Gate Charge c Gate-Source Charge c Gate-Drain Charge ...

Page 3

... 0.0 0.008 25_C 0.006 125_C 0.004 0.002 0.000 iss SUP/SUB75P03-08 Vishay Siliconix Transfer Characteristics T = –55_C C 25_C 125_C 1.5 3.0 4.5 V – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current – Drain Current (A) ...

Page 4

... SUP/SUB75P03-08 Vishay Siliconix On-Resistance vs. Junction Temperature 1 1.5 1.2 0.9 0.6 –50 – – Junction Temperature (_C) J Maximum Avalanche and Drain Current vs. Case Temperature 100 100 T – Case Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –5 – ...

Page 5

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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