... Symbol T = 25_C 125_C 0 25_C (TO-220AB and TO-263 25_C (TO-263) A Symbol c PCB Mount (TO-263) R thJA Free Air (TO-220AB) R thJA R thJC SUP/SUB75P03-08 Vishay Siliconix P-Channel MOSFET Limit " – –65 I –200 DM I – 280 AR d 250 ...
... SUP/SUB75P03-08 Vishay Siliconix _ Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reversen Transfer Capacitance c Total Gate Charge c Gate-Source Charge c Gate-Drain Charge ...
... 0.0 0.008 25_C 0.006 125_C 0.004 0.002 0.000 iss SUP/SUB75P03-08 Vishay Siliconix Transfer Characteristics T = –55_C C 25_C 125_C 1.5 3.0 4.5 V – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current – Drain Current (A) ...
... SUP/SUB75P03-08 Vishay Siliconix On-Resistance vs. Junction Temperature 1 1.5 1.2 0.9 0.6 –50 – – Junction Temperature (_C) J Maximum Avalanche and Drain Current vs. Case Temperature 100 100 T – Case Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –5 – ...
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...