SUB75P03-07-E3 Siliconix / Vishay, SUB75P03-07-E3 Datasheet
SUB75P03-07-E3
Manufacturer Part Number
SUB75P03-07-E3
Description
MOSFET; P-Ch; VDSS -30V; RDS(ON) 0.0055Ohm; ID -75A; TO-263; PD 187W; VGS +/-20V; gFS 20
Manufacturer
Siliconix / Vishay
Datasheet
1.SUB75P03-07-E3.pdf
(2 pages)
Specifications of SUB75P03-07-E3
Current, Drain
-75 A
Gate Charge, Total
160 nC
Package Type
TO-263
Polarization
P-Channel
Power Dissipation
187 W
Resistance, Drain To Source On
0.0055 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
150 ns
Time, Turn-on Delay
25 ns
Transconductance, Forward
20 S
Voltage, Breakdown, Drain To Source
-30 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. When Mounted on 1" square PCB (FR-4 material).
d. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
V
Ordering Information: SUB75P03-07 (TO-263)
DS
- 30
TO-220AB
SUP75P03-07
Top View
G D S
(V)
DRAIN connected to TAB
0.010 at V
0.007 at V
SUB75P03-07-E3 (TO-263, Lead (Pb)-free)
SUP75P03-07 (TO-220AB)
SUP75P03-07-E3 (TO-220AB, Lead (Pb)-free)
r
DS(on)
J
b
P-Channel 30-V (D-S) 175 °C MOSFET
= 175 °C)
GS
GS
(Ω)
= - 4.5 V
= - 10 V
T
C
SUB75P03-07
= 25 °C (TO-220AB and TO-263)
TO-263
G
Top View
PCB Mount (TO-263)
T
D
Free Air (TO-220AB)
C
A
= 25 °C (TO-263)
S
= 25 °C, unless otherwise noted
I
D
T
± 75
± 75
L = 0.1 mH
T
C
(A)
C
= 125 °C
= 25 °C
a
c
c
Symbol
Symbol
T
R
J
R
V
E
I
I
P
, T
DM
I
AR
thJA
thJC
GS
AR
D
D
stg
G
P-Channel MOSFET
SUP/SUB75P03-07
- 55 to 175
Limit
- 240
Limit
- 75
± 20
187
D
3.75
62.5
S
- 65
- 60
180
0.8
40
a
d
Vishay Siliconix
°C/W
Unit
Unit
mJ
RoHS*
°C
COMPLIANT
W
V
A
Available
1
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SUB75P03-07-E3 Summary of contents
Page 1
... 0.010 4 TO-220AB DRAIN connected to TAB Top View SUP75P03-07 Ordering Information: SUB75P03-07 (TO-263) SUB75P03-07-E3 (TO-263, Lead (Pb)-free) SUP75P03-07 (TO-220AB) SUP75P03-07-E3 (TO-220AB, Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy ...
Page 2
... SUP/SUB75P03-07 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reversen Transfer Capacitance c Total Gate Charge ...