BSH205 T/R NXP Semiconductors, BSH205 T/R Datasheet - Page 5

• Manufacturer Part Number: BSH205 T/R
• Description: MOSFET TAPE7 MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BSH205 T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.75 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Fall Time: 4.5 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 417 mW
• Rise Time: 4.5 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 45 ns
• Part # Aliases: BSH205,215

Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
-6
-5
-4
-3
-2
-1
0
0
Gate-source voltage, VGS (V)
VDD = 10 V
RD = 20 Ohms
Tj = 25 C
1
Gate charge, (nC)
V
2
GS
= f(Q
3
G
)
4
BSH205
5
5
4.5
3.5
2.5
1.5
0.5
I
5
4
3
2
1
0
F
0
= f(V
Source-Drain Diode Current, IF (A)
Fig.14. Typical reverse diode current.
SDS
0.2
); conditions: V
Drain-Source Voltage, VSDS (V)
0.4
0.6
150 C
GS
0.8
= 0 V; parameter T
Product specification
Tj = 25 C
1
1.2
BSH205
BSH205
Rev 1.000
1.4
j