SI4848DY-E3 Vishay/Siliconix, SI4848DY-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4848DY-E3
• Description: MOSFET 150V 3.7A 3W
• Manufacturer: Vishay/Siliconix

Specifications of SI4848DY-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.7 A
• Resistance Drain-source Rds (on): 85 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 W
• Rise Time: 10 ns
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 24 ns

Si4848DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71356.
www.vishay.com
4
- 0.5
- 1.0
- 1.5
1.0
0.5
0.0
0.01
- 50
0.01
0.1
0.1
2
1
2
1
10
10
- 25
-4
-4
0.05
0.05
0.02
Duty Cycle = 0.5
0.1
0.02
0.2
Duty Cycle = 0.5
0.2
0.1
0
Threshold Voltage
T
Single Pulse
J
25
- Temperature (°C)
10
10
Single Pulse
-3
-3
50
I
D
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Normalized Thermal Transient Impedance, Junction-to-Foot
10
100
10
-2
-2
125
150
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
10
-1
-1
1
60
50
40
30
20
10
1
0
0.01
10
0.1
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time (s)
t
1
A
S09-0870-Rev. C, 18-May-09
= P
1
t
2
Document Number: 71356
DM
100
Z
thJA
thJA
100
t
t
1
2
(t)
= 68 °C/W
10
1000
600
100