SI4848DY-E3 Vishay/Siliconix, SI4848DY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4848DY-E3
• Description: MOSFET 150V 3.7A 3W
• Manufacturer: Vishay/Siliconix

Specifications of SI4848DY-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.7 A
• Resistance Drain-source Rds (on): 85 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 W
• Rise Time: 10 ns
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 24 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71356
S09-0870-Rev. C, 18-May-09
0.15
0.12
0.09
0.06
0.03
0.00
20
16
12
50
10
8
4
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 3.5 A
On-Resistance vs. Drain Current
0.2
= 75 V
5
6
V
SD
V
Q
GS
g
- Source-to-Drain Voltage (V)
0.4
- Total Gate Charge (nC)
I
D
= 6 V
T
J
- Drain Current (A)
Gate Charge
10
12
= 150 °C
0.6
15
18
0.8
V
GS
T
20
24
= 10 V
J
1.0
= 25 °C
25
1.2
30
1200
0.25
0.20
0.15
0.10
0.05
0.00
900
600
300
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 3.5 A
C
= 10 V
rss
30
2
V
V
GS
DS
0
T
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
60
4
C
50
C
Vishay Siliconix
oss
iss
90
I
D
6
75
= 3.5 A
Si4848DY
100
www.vishay.com
120
8
125
150
150
10
3