BSP250 /T3 NXP Semiconductors, BSP250 /T3 Datasheet - Page 7

• Manufacturer Part Number: BSP250 /T3
• Description: MOSFET TAPE13 MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BSP250 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 20 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 1650 mW
• Rise Time: 20 ns
• Factory Pack Quantity: 4000
• Part # Aliases: BSP250,135

Philips Semiconductors
1997 Jun 20
handbook, full pagewidth
P-channel enhancement mode
vertical D-MOS transistor
R th j-s
(K/W)
Fig.12 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
10
10
1
10
1
6
0.75
0.33
0.05
0.02
0.01
0.5
0.2
0.1
=
10
0
5
10
4
10
7
3
10
2
10
P
1
t p
Product specification
T
t p (s)
=
MBE147
BSP250
t p
T
t
1