BSP250 /T3 NXP Semiconductors, BSP250 /T3 Datasheet - Page 2

• Manufacturer Part Number: BSP250 /T3
• Description: MOSFET TAPE13 MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BSP250 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 20 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 1650 mW
• Rise Time: 20 ns
• Factory Pack Quantity: 4000
• Part # Aliases: BSP250,135

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a SOT223 plastic SMD package.
QUICK REFERENCE DATA
1997 Jun 20
V
V
V
V
I
R
P
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
D
SYMBOL
High-speed switching
No secondary breakdown
Very low on-resistance.
Low-loss motor and actuator drivers
Power switching.
DS
SD
GSO
GSth
tot
DSon
P-channel enhancement mode
vertical D-MOS transistor
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CAUTION
PARAMETER
I
open drain
I
I
T
2
S
D
D
s
PINNING - SOT223
= 1.25 A
= 1 mA; V
= 1 A; V
= 100 C
handbook, halfpage
CONDITIONS
PIN
1
2
3
4
GS
Top view
Fig.1 Simplified outline and symbol.
DS
= 10 V
1
= V
GS
SYMBOL
2
g
d
s
d
4
1
3
MIN.
MAM121
gate
drain
source
drain
Product specification
g
0.25
5
30
1.6
20
2.8
3
DESCRIPTION
MAX.
BSP250
d
s
V
V
V
V
A
W
UNIT