SIA513DJ-T1-E3 Vishay/Siliconix, SIA513DJ-T1-E3 Datasheet - Page 6
![no-image](/images/no-image-200.jpg)
SIA513DJ-T1-E3
Manufacturer Part Number
SIA513DJ-T1-E3
Description
MOSFET 20V 4.5A 6.5W
Manufacturer
Vishay/Siliconix
Datasheet
1.SIA513DJ-T1-E3.pdf
(14 pages)
Specifications of SIA513DJ-T1-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.5 A
Resistance Drain-source Rds (on)
60 mOhms, 110 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SC-70-6 Dual
Fall Time
40 ns at N Channel, 45 ns at P Channel
Minimum Operating Temperature
- 55 C
Power Dissipation
6.5 W
Rise Time
40 ns at N Channel, 45 ns at P Channel
Factory Pack Quantity
3000
Typical Turn-off Delay Time
20 ns at N Channel, 15 ns at P Channel
Part # Aliases
SIA513DJ-E3
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIA513DJ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SiA513DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
12
10
8
6
4
2
0
0
Package Limited
25
D
T
C
is based on T
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
New Product
150
8
6
4
2
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
S-80437-Rev. B, 03-Mar-08
Document Number: 70443
100
125
150