SIA513DJ-T1-E3 Vishay/Siliconix, SIA513DJ-T1-E3 Datasheet - Page 11

• Manufacturer Part Number: SIA513DJ-T1-E3
• Description: MOSFET 20V 4.5A 6.5W
• Manufacturer: Vishay/Siliconix

Specifications of SIA513DJ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.5 A
• Resistance Drain-source Rds (on): 60 mOhms, 110 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6 Dual
• Fall Time: 40 ns at N Channel, 45 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 6.5 W
• Rise Time: 40 ns at N Channel, 45 ns at P Channel
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 20 ns at N Channel, 15 ns at P Channel
• Part # Aliases: SIA513DJ-E3

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
0.01
0.01
0.1
1
1
http://www.vishay.com/ppg?70443.
10
10
0.02
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
Duty Cycle = 0.5
Single Pulse
0.2
Single Pulse
0.02
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
10
-3
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
1
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
t
Vishay Siliconix
2
DM
100
Z
th JA
th JA
t
t
SiA513DJ
1
2
(t)
= 85 °C/W
www.vishay.com
1000
10
-1
11