PMF780SN T/R NXP Semiconductors, PMF780SN T/R Datasheet - Page 9

• Manufacturer Part Number: PMF780SN T/R
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PMF780SN T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.57 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Fall Time: 4 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 560 mW
• Rise Time: 4 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 5 ns
• Part # Aliases: PMF780SN,115

Philips Semiconductors
7. Package outline
Fig 14. SOT323 (SC-70).
9397 750 12764
Product data
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT323
1.1
0.8
A
max
0.1
A 1
1
0.4
0.3
b p
y
IEC
e 1
0.25
0.10
c
D
e
b p
2.2
1.8
D
3
JEDEC
1.35
1.15
E
0
2
REFERENCES
Rev. 01 — 10 February 2004
1.3
e
w
B
M
0.65
B
e 1
SC-70
scale
EIAJ
1
2.2
2.0
H E
A
0.45
0.15
L p
N-channel TrenchMOS™ standard level FET
A 1
2 mm
0.23
0.13
Q
H E
0.2
E
v
detail X
0.2
PROJECTION
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
w
EUROPEAN
L p
A
PMF780SN
Q
c
X
v
ISSUE DATE
M
97-02-28
A
SOT323
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