PMF780SN T/R NXP Semiconductors, PMF780SN T/R Datasheet - Page 8

• Manufacturer Part Number: PMF780SN T/R
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PMF780SN T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.57 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Fall Time: 4 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 560 mW
• Rise Time: 4 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 5 ns
• Part # Aliases: PMF780SN,115

Philips Semiconductors
9397 750 12764
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
j
I S
0.8
0.6
0.4
0.2
= 25 C and 150 C; V
1
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
0.3
150 C
GS
0.6
= 0 V
0.9
T j = 25 C
V SD (V)
03an91
Rev. 01 — 10 February 2004
1.2
Fig 13. Gate-source voltage as a function of gate
V GS
I
(V)
D
= 1 A; V
10
N-channel TrenchMOS™ standard level FET
8
6
4
2
0
charge; typical values.
0
I D = 1 A
T j = 25 C
V DD = 30 V
DD
= 30 V
0.3
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
0.6
PMF780SN
0.9
Q G (nC)
03an93
1.2
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