SI4435DY-REVA-E3 Vishay/Siliconix, SI4435DY-REVA-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4435DY-REVA-E3
• Description: MOSFET 30V 8A 2.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI4435DY-REVA-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A
• Resistance Drain-source Rds (on): 20 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 31 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Rise Time: 17 ns
• Typical Turn-off Delay Time: 75 ns

Si4435DY
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations.
http://www.vishay.com/ppg?70149.
www.vishay.com
4
–0.0
–0.2
–0.4
–0.6
30
10
0.8
0.6
0.4
0.2
0.01
1
0.1
–50
0.0
2
1
10
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
–25
Source-Drain Diode Forward Voltage
0.2
V
I
D
SD
= 250 µA
0
– Source-to-Drain Voltage (V)
T
0.4
J
T
Threshold Voltage
= 150_C
J
– Temperature (_C)
25
0.6
10
Single Pulse
–3
50
0.8
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
T
J
= 25_C
1.0
100
1.2
125
10
–2
Square Wave Pulse Duration (sec)
150
1.4
For related documents such as package/tape drawings, part marking, and reliability data, see
10
–1
0.10
0.08
0.06
0.04
0.02
0.00
80
60
40
20
0.01
0
0
_
On-Resistance vs. Gate-to-Source Voltage
V
2
GS
0.10
1
– Gate-to-Source Voltage (V)
Single Pulse Power
Notes:
P
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
DM
JM
Time (sec)
4
– T
t
1
A
= P
t
2
DM
1.00
I
D
Z
thJA
6
= 8.0 A
S-51472—Rev. G, 01-Aug-05
t
t
thJA
1
2
10
Document Number: 70149
(t)
= 50_C/W
8
10.00
30
10