SI4435DY-REVA-E3 Vishay/Siliconix, SI4435DY-REVA-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4435DY-REVA-E3
• Description: MOSFET 30V 8A 2.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI4435DY-REVA-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A
• Resistance Drain-source Rds (on): 20 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 31 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Rise Time: 17 ns
• Typical Turn-off Delay Time: 75 ns

Si4435DY
Vishay Siliconix
Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On State Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Guaranteed by design, not subject to production testing. Values shown are for Product Revision A.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
a
Parameter
b
b
b
b
b
b
_
Symbol
V
r
r
I
I
DS(
DS(on)
t
t
I
I
I
GS(th)
V
D(
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
R
g
t
t
SD
t
rr
fs
gs
gd
G
r
f
g
)
)
V
DS
I
V
D
DS
^ –1 A, V
= –15 V, V
I
F
V
V
= –30 V, V
V
V
V
V
V
V
DS
V
V
DS
= –2.1 A, di/dt = 100 A/ms
GS
I
DS
DS
GS
DS
S
DD
DD
DS
Test Condition
= –2.1 A, V
v –5 V, V
v –5 V, V
= V
= 0 V, V
= –4.5 V, I
= –10 V, I
= –15 V, I
= –30 V, V
= –15 V, R
= 15 V, R
GEN
GS
GS
GS
, I
= –10 V, I
= –10 V, R
GS
D
= 0 V, T
GS
GS
D
D
= –250 mA
D
GS
GS
= "20 V
L
L
= –8.0 A
= –8.0 A
= –5.0 A
= –4.5 V
= 15 W
= 15 W
= –10 V
= 0 V
= 0 V
J
D
G
= 70_C
= –4.6 A
= 6 W
Min
–1.0
–40
–10
Typ
0.015
0.022
–0.75
–2.0
2.75
9.5
20
47
16
17
75
31
40
8
S-51472—Rev. G, 01-Aug-05
a
Document Number: 70149
"100
Max
0.035
–3.0
0.02
–1.2
120
4.1
–1
–5
60
30
30
80
80
Unit
nA
mA
mA
nC
ns
V
A
A
W
W
S
V
W