PSMN004-60B /T3 NXP Semiconductors, PSMN004-60B /T3 Datasheet - Page 8

• Manufacturer Part Number: PSMN004-60B /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN004-60B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 0.0036 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 75 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 230 W
• Rise Time: 74 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 133 ns
• Part # Aliases: PSMN004-60B,118

NXP Semiconductors
PSMN004-60B_2
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
V
R
(V)
(W)
0.015
0.005
GS
DSon
0.01
12
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
I
V
T
V
D
j
DD
GS
= 25 °C
= 75 A
= 48 V
5 V
= 20 V
50
100
5.5 V
10 V
100
8 V
200
6 V
150
7 V
T
j
I
Q
= 25 °C
D
G
6.5 V
(A)
(nC)
03ah83
03ah88
Rev. 02 — 15 December 2009
300
200
N-channel TrenchMOS SiliconMAX standard level FET
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
C
a
10
10
10
10
2.4
1.8
1.2
0.6
0
5
4
3
2
−60
10
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
−1
0
1
PSMN004-60B
60
10
120
© NXP B.V. 2009. All rights reserved.
V
DS
T
j
(°C)
(V)
03aa28
03ah87
180
10
2
C
C
C
iss
oss
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