PSMN004-60B /T3 NXP Semiconductors, PSMN004-60B /T3 Datasheet - Page 5

• Manufacturer Part Number: PSMN004-60B /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN004-60B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 0.0036 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 75 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 230 W
• Rise Time: 74 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 133 ns
• Part # Aliases: PSMN004-60B,118

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN004-60B_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
0.02
δ = 0.5
0.2
0.1
0.05
single pulse
10
−5
Conditions
see
mounted on a printed circuit board;
minimum footprint
10
−4
Rev. 02 — 15 December 2009
Figure 4
10
−3
N-channel TrenchMOS SiliconMAX standard level FET
10
−2
10
−1
P
t
p
1
T
Min
-
-
PSMN004-60B
t
δ =
p
(s)
03af48
T
t
t
p
10
Typ
-
-
© NXP B.V. 2009. All rights reserved.
Max
0.65
50
Unit
K/W
K/W
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