BSP130 T/R NXP Semiconductors, BSP130 T/R Datasheet - Page 6

• Manufacturer Part Number: BSP130 T/R
• Description: MOSFET TAPE-7 MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BSP130 T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.35 A
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 39 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1500 mW
• Rise Time: 39 ns
• Factory Pack Quantity: 1000
• Typical Turn-off Delay Time: 26 ns
• Part # Aliases: BSP130,115

Philips Semiconductors
2001 Dec 11
handbook, halfpage
handbook, full pagewidth
(1) R
N-channel enhancement mode
vertical D-MOS transistor
= 0.01; T
R th j-a
(K/W)
10
10
10
10
10
I D
(A)
DSon
10
10
1
10
1
2
3
1
2
1
1
amb
limitation.
5
P
= 25 C.
0.75
0.05
0.02
0.01
Fig.10 Transient thermal resistance from junction to ambient as a function of pulse time.
0.5
0.2
0.1
t p
=
0
(1)
Fig.11 SOAR curve.
T
DC
10
10
4
=
t p
T
t
10
10
3
2
V DS (V)
100 ms
10 s
100 s
1 ms
10 ms
1s
t p =
MLD773
10
10
2
3
10
6
1
1
10
P
t p
10
T
2
Product specification
t p (s)
=
BSP130
MRC221
t p
T
t
10
3