BSP130 T/R NXP Semiconductors, BSP130 T/R Datasheet - Page 6
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BSP130 T/R
Manufacturer Part Number
BSP130 T/R
Description
MOSFET TAPE-7 MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.BSP130_TR.pdf
(12 pages)
Specifications of BSP130 T/R
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.35 A
Configuration
Single Dual Drain
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Fall Time
39 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1500 mW
Rise Time
39 ns
Factory Pack Quantity
1000
Typical Turn-off Delay Time
26 ns
Part # Aliases
BSP130,115
Philips Semiconductors
2001 Dec 11
handbook, halfpage
handbook, full pagewidth
(1) R
N-channel enhancement mode
vertical D-MOS transistor
= 0.01; T
R th j-a
(K/W)
10
10
10
10
10
I D
(A)
DSon
10
10
1
10
1
2
3
1
2
1
1
amb
limitation.
5
P
= 25 C.
0.75
0.05
0.02
0.01
Fig.10 Transient thermal resistance from junction to ambient as a function of pulse time.
0.5
0.2
0.1
t p
=
0
(1)
Fig.11 SOAR curve.
T
DC
10
10
4
=
t p
T
t
10
10
3
2
V DS (V)
100 ms
10 s
100 s
1 ms
10 ms
1s
t p =
MLD773
10
10
2
3
10
6
1
1
10
P
t p
10
T
2
Product specification
t p (s)
=
BSP130
MRC221
t p
T
t
10
3