BSP130 T/R NXP Semiconductors, BSP130 T/R Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BSP130 T/R
Manufacturer Part Number
BSP130 T/R
Description
MOSFET TAPE-7 MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.BSP130_TR.pdf
(12 pages)
Specifications of BSP130 T/R
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.35 A
Configuration
Single Dual Drain
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Fall Time
39 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1500 mW
Rise Time
39 ns
Factory Pack Quantity
1000
Typical Turn-off Delay Time
26 ns
Part # Aliases
BSP130,115
Philips Semiconductors
2001 Dec 11
handbook, halfpage
handbook, halfpage
N-channel enhancement mode
vertical D-MOS transistor
P tot
(W)
1.5
0.5
2
1
0
0
10 V
0 V
Fig.2 Switching times test circuit.
Fig.4 Power derating curve.
50
50
100
V DD = 50 V
I D
150
MBB691
T j ( C)
MRC218
200
4
handbook, halfpage
handbook, halfpage
V
Fig.5
GS
(pF)
250
200
150
100
= 0; f = 1 MHz; T
INPUT
OUTPUT
C
50
0
0
Capacitance as a function of drain-source
voltage; typical values.
Fig.3 Input and output waveforms.
10 %
j
t on
= 25 C.
10
90 %
90 %
20
Product specification
V DS (V)
t off
C oss
BSP130
C iss
C rss
MLD765
MBB692
10 %
30