BSP130 T/R NXP Semiconductors, BSP130 T/R Datasheet - Page 4

• Manufacturer Part Number: BSP130 T/R
• Description: MOSFET TAPE-7 MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BSP130 T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.35 A
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 39 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1500 mW
• Rise Time: 39 ns
• Factory Pack Quantity: 1000
• Typical Turn-off Delay Time: 26 ns
• Part # Aliases: BSP130,115

Philips Semiconductors
2001 Dec 11
handbook, halfpage
handbook, halfpage
N-channel enhancement mode
vertical D-MOS transistor
P tot
(W)
1.5
0.5
2
1
0
0
10 V
0 V
Fig.2 Switching times test circuit.
Fig.4 Power derating curve.
50
50
100
V DD = 50 V
I D
150
MBB691
T j ( C)
MRC218
200
4
handbook, halfpage
handbook, halfpage
V
Fig.5
GS
(pF)
250
200
150
100
= 0; f = 1 MHz; T
INPUT
OUTPUT
C
50
0
0
Capacitance as a function of drain-source
voltage; typical values.
Fig.3 Input and output waveforms.
10 %
j
t on
= 25 C.
10
90 %
90 %
20
Product specification
V DS (V)
t off
C oss
BSP130
C iss
C rss
MLD765
MBB692
10 %
30