VS-ST330S12P0 Vishay Semiconductors, VS-ST330S12P0 Datasheet - Page 5

• Manufacturer Part Number: VS-ST330S12P0
• Description: SCRs 1200 Volt 330 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST330S12P0

• Product Category: SCRs
• Breakover Current Ibo Max: 9420 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Forward Voltage Drop: 1.52 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-118
• Factory Pack Quantity: 6

Document Number: 94409
Revision: 11-Aug-08
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
Fig. 5 - Maximum Non-Repetitive Surge Current
1
At Any Rated Load Condition And With
S T 330S S eries
Rated V
RRM
0.001
0.01
0.1
Applied Following S urge.
0.001
1
10
S teady S tate Value
R
(DC Operation)
thJC
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 125°C
For technical questions, contact: [e-mail]
= 0.10 K/ W
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10000
1000
100
Phase Control Thyristors
Fig. 8 - Thermal Impedance Z
Fig. 7 - On-State Voltage Drop Characteristics
0.01
(Stud Version), 330 A
100
0
Instantaneous On-state Voltage (V)
1
S quare Wave Pulse Duration (s)
2
3
Tj = 25 °C
Tj = 125 °C
ST330S Series
0.1
S T 330S S eries
4
thJC
5
Characteristics
9000
8000
7000
6000
5000
4000
3000
Fig. 6 - Maximum Non-Repetitive Surge Current
6
0.01
Vishay High Power Products
Of Conduction May Not Be Maintained.
Maximum Non R epetitive S urge Current
7
1
S T 330S S eries
Vers us Pulse T rain Duration. Control
Pulse T rain Duration (s)
ST330SPbF Series
No Voltage R eapp lied
Rated V
0.1
10
Initial T = 125°C
R RM
R eapplied
J
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