VS-ST330S12P0 Vishay Semiconductors, VS-ST330S12P0 Datasheet - Page 4

• Manufacturer Part Number: VS-ST330S12P0
• Description: SCRs 1200 Volt 330 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST330S12P0

• Product Category: SCRs
• Breakover Current Ibo Max: 9420 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Forward Voltage Drop: 1.52 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-118
• Factory Pack Quantity: 6

ST330SPbF Series
Vishay High Power Products
www.vishay.com
4
130
120
110
100
90
80
70
0
Fig. 1 - Current Ratings Characteristics
50
Average On-state Current (A)
S T 330S S eries
R
100 150 200 250 300 350
480
440
400
360
320
280
240
200
160
120
650
600
550
500
450
400
350
300
250
200
150
100
thJC
30°
80
40
50
0
0
0
0
RMS Limit
(DC) = 0.10 K/ W
60°
RMS Limit
50
180°
120°
100
Average On-state Current (A)
DC
90°
60°
30°
Average On-state Current (A)
Conduc tion Angle
90°
180°
120°
100
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90°
60°
30°
200
120°
150
300
180°
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Phase Control Thyristors
200 250
Conduction Period
Conduction Angle
(Stud Version), 330 A
S T 330S S eries
T = 125°C
S T 330S S eries
T = 125°C
400
J
J
500
300
350
600
25
25
Maximum Allowable Ambient T emperature (°C)
Maximum Allowable Ambient T emp erature (°C)
50
50
130
120
110
100
90
80
70
60
0
75
75
Fig. 2 - Current Ratings Characteristics
100
Average On-state Current (A)
30°
100
100
S T 330S S eries
R
200
thJC
60°
90°
(DC) = 0.10 K/ W
120°
300
125
125
Conduc tion Period
180°
Document Number: 94409
400
DC
Revision: 11-Aug-08
500
600