VS-HFA04TB60SPBF Vishay Semiconductors, VS-HFA04TB60SPBF Datasheet

VS-HFA04TB60SPBF

Manufacturer Part Number

VS-HFA04TB60SPBF

Description

Rectifiers 600 Volt 4.0 Amp

Manufacturer

Vishay Semiconductors

Datasheet

1.VS-HFA04TB60SPBF.pdf (8 pages)

Specifications of VS-HFA04TB60SPBF

Product Category

Rectifiers

Rohs

yes

Product

Ultra Fast Recovery Rectifiers

Configuration

Single

Reverse Voltage

600 V

Forward Voltage Drop

2.2 V at 8 A

Recovery Time

42 ns

Forward Continuous Current

4 A

Max Surge Current

25 A

Reverse Current Ir

3 uA

Mounting Style

SMD/SMT

Package / Case

D2PAK

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Factory Pack Quantity

1000

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Revision: 10-Jun-11

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Cathode to anode voltage

Maximum continuous forward current

Single pulse forward current

Maximum repetitive forward current

Maximum power dissipation

Operating junction and storage temperature range

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,

Diode variation

Package

F(AV)

(typ.)

max.

at I

www.vishay.com

N/C

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

PAK

Ultrafast Soft Recovery Diode, 4 A

Anode

TO-263AB (D

Single die

150 °C

600 V

17 ns

1.8 V

4 A

PAK)

SYMBOL

HEXFRED

FSM

FRM

, T

Stg

TEST CONDITIONS

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Specified at operating temperature

• Meets MSL level 1, per J-STD-020, LF maximum

• AEC-Q101 qualified

• Material categorization:

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA04TB60S is a state of the art ultrafast recovery

diode. Employing the latest in epitaxial construction and

advanced processing techniques it features a superb

combination of characteristics which result in performance

which is unsurpassed by any rectifier previously available.

With basic ratings of 600 V and 4 A continuous current, the

VS-HFA04TB60S is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED

extremely low values of peak recovery current (I

does not exhibit any tendency to “snap-off” during the

offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED VS-HFA04TB60S is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

= 100 °C

= 25 °C

= 100 °C

peak of 260 °C

For definitions of compliance please see

www.vishay.com/doc?99912

portion of recovery. The HEXFRED features combine to

www.vishay.com/doc?91000

RRM

VS-HFA04TB60SPbF

Vishay Semiconductors

- 55 to + 150

VALUES

DiodesEuropa@vishay.com

600

Document Number: 94036

product line features

UNITS

°C

RRM

) and

Related parts for VS-HFA04TB60SPBF

VS-HFA04TB60SPBF Summary of contents

Page 1

... TEST CONDITIONS 100 ° FSM I FRM ° 100 ° Stg 1 www.vishay.com/doc?91000 VS-HFA04TB60SPbF Vishay Semiconductors ® product line features ) and RRM VALUES UNITS 600 150 °C Document Number: 94036 DiodesEuropa@vishay.com ...

Page 2

... /dt = 200 A/μ ° 200 125 ° ° 125 °C J TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s Typical socket mount 2 Case style D PAK 2 www.vishay.com/doc?91000 VS-HFA04TB60SPbF Vishay Semiconductors MIN. TYP. MAX. UNITS 600 - - - 1.5 1 1.8 2.2 - 1.4 1.7 - 0.17 3.0 μ 300 - 4.0 8 ...

Page 3

... V - Reverse Voltage ( 0.01 0.001 0. Rectangular Pulse Duration (s) 1 Characteristics thJC 3 www.vishay.com/doc?91000 VS-HFA04TB60SPbF Vishay Semiconductors T = 150 ° 125 ° °C J 100 200 300 400 500 V - Reverse Voltage (V) R Fig Typical Reverse Current vs. Reverse Voltage 1000 ...

Page 4

... Fig Typical Stored Charge vs 1000 100 1000 100 94036_08 /dt Fig Typical www.vishay.com/doc?91000 VS-HFA04TB60SPbF Vishay Semiconductors 1000 dI /dt (A/μ 200 125 ° °C J 1000 dI /dt (A/μs) F /dt vs. dI /dt (rec)M ...

Page 5

... F ( area under curve defined and I RRM Q (5) dI /dt - peak rate of change of (rec)M current during t and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions 5 www.vishay.com/doc?91000 VS-HFA04TB60SPbF Vishay Semiconductors ( RRM (5) / RRM = rr 2 portion Document Number: 94036 DiodesEuropa@vishay ...

Page 6

... Voltage rating (60 = 600 PAK None = Tube (50 pieces) TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS 6 www.vishay.com/doc?91000 VS-HFA04TB60SPbF Vishay Semiconductors TRL PbF 8 9 www.vishay.com/doc?95046 www.vishay.com/doc?95054 www.vishay.com/doc?95032 Document Number: 94036 DiodesEuropa@vishay.com ...

Page 7

... E 9.65 0.039 E1 7.90 0.035 4 e 0.070 H 14.61 0.068 4 L 1.78 0.029 L1 0.023 4 L2 1.27 0.065 L3 0.380 2 L4 4.78 DiodesEurope@vishay.com This document is subject to change without notice. Outline Dimensions Vishay Semiconductors Pad layout 11.00 MIN. (0.43) 9.65 MIN. (0.38) (D1) (3) 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 2.32 MIN. (0.08) 2.64 (0.103) (3) 2.41 (0.096) Base Plating (4) Metal b1, b3 (4) ( Seating ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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