SUB75N03-04-E3 Vishay/Siliconix, SUB75N03-04-E3 Datasheet - Page 4

• Manufacturer Part Number: SUB75N03-04-E3
• Description: MOSFET 30V 75A 187W
• Manufacturer: Vishay/Siliconix

Specifications of SUB75N03-04-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 7 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263-3
• Fall Time: 95 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 187 W
• Rise Time: 40 ns
• Factory Pack Quantity: 800
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 190 ns

SUP/SUB75P03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
1000
100
1.8
1.5
1.2
0.9
0.6
0.3
0.1
0.00001
10
0
1
- 50
On-Resistance vs. Junction Temperature
V
I
- 25
I
D
AV
GS
= 30 A
0.0001
(A) at T
= 10 V
T
Avalanche Current vs. Time
0
J
- Junction Temperature (°C)
A
25
= 150 °C
0.001
50
t
in
I
(s)
AV
75
(A) at T
0.01
100
A
= 25 °C
125
0.1
150
175
1
100
10
45
40
35
30
25
1
- 50 - 25
0
Source-Drain Diode Forward Voltage
I
D
= 250 µA
0.2
V
0
vs. Junction Temperature
T
Drain Source Breakdown
SD
J
- Junction Temperature (°C)
- Source-to-Drain Voltage (V)
25
0.4
T
50
J
= 150 °C
S-72688-Rev. D, 24-Dec-07
Document Number: 71109
75
0.6
100
125
T
0.8
J
= 25 °C
150
175
1.0