SUB75N03-04-E3 Vishay/Siliconix, SUB75N03-04-E3 Datasheet

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SUB75N03-04-E3

Manufacturer Part Number
SUB75N03-04-E3
Description
MOSFET 30V 75A 187W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SUB75N03-04-E3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Resistance Drain-source Rds (on)
7 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Fall Time
95 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
187 W
Rise Time
40 ns
Factory Pack Quantity
800
Tradename
TrenchFET
Typical Turn-off Delay Time
190 ns
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. When Mounted on 1" square PCB (FR-4 material).
d. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71109
S-72688-Rev. D, 24-Dec-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
V
Ordering Information: SUB75P03-07 (TO-263)
DS
- 30
TO-220AB
SUP75P03-07
Top View
G D S
(V)
DRAIN connected to TAB
0.010 at V
0.007 at V
SUB75P03-07-E3 (TO-263, Lead (Pb)-free)
SUP75P03-07 (TO-220AB)
SUP75P03-07-E3 (TO-220AB, Lead (Pb)-free)
r
DS(on)
J
b
P-Channel 30-V (D-S) 175 °C MOSFET
= 175 °C)
GS
GS
(Ω)
= - 4.5 V
= - 10 V
T
C
SUB75P03-07
= 25 °C (TO-220AB and TO-263)
TO-263
G
Top View
PCB Mount (TO-263)
T
D
Free Air (TO-220AB)
C
A
= 25 °C (TO-263)
S
= 25 °C, unless otherwise noted
I
D
T
± 75
± 75
L = 0.1 mH
T
C
(A)
C
= 125 °C
= 25 °C
a
c
c
Symbol
Symbol
T
R
J
R
V
E
I
I
P
, T
DM
I
AR
thJA
thJC
GS
AR
D
D
stg
G
P-Channel MOSFET
SUP/SUB75P03-07
- 55 to 175
Limit
- 240
Limit
- 75
± 20
187
D
3.75
62.5
S
- 65
- 60
180
0.8
40
a
d
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
RoHS*
°C
COMPLIANT
W
V
A
Available
1

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SUB75N03-04-E3 Summary of contents

Page 1

P-Channel 30-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V (V) r (Ω) DS DS(on) 0.007 0.010 4 TO-220AB DRAIN connected to TAB ...

Page 2

SUP/SUB75P03-07 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic ...

Page 3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 thru 200 150 100 Drain-to-Source Voltage (V) DS Output Characteristics 150 120 ...

Page 4

SUP/SUB75P03-07 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 1.5 1.2 0.9 0.6 0 Junction Temperature (°C) ...

Page 5

THERMAL RATINGS Case Temperature (°C) C Maximum Avalanche and Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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