SUB75N03-04-E3 Vishay/Siliconix, SUB75N03-04-E3 Datasheet
SUB75N03-04-E3
Specifications of SUB75N03-04-E3
Related parts for SUB75N03-04-E3
SUB75N03-04-E3 Summary of contents
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P-Channel 30-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V (V) r (Ω) DS DS(on) 0.007 0.010 4 TO-220AB DRAIN connected to TAB ...
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SUP/SUB75P03-07 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic ...
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 thru 200 150 100 Drain-to-Source Voltage (V) DS Output Characteristics 150 120 ...
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SUP/SUB75P03-07 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 1.5 1.2 0.9 0.6 0 Junction Temperature (°C) ...
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THERMAL RATINGS Case Temperature (°C) C Maximum Avalanche and Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...