TN0110N3-P002-G Supertex, TN0110N3-P002-G Datasheet - Page 2

• Manufacturer Part Number: TN0110N3-P002-G
• Description: MOSFET 100V 3Ohm
• Manufacturer: Supertex

Specifications of TN0110N3-P002-G

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Resistance Drain-source Rds (on): 3 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-92
• Power Dissipation: 1 W
• Factory Pack Quantity: 2000

Thermal Characteristics
Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
ΔR
† I
ΔV
R
BV
V
1.
2.
Sym
t
I
C
C
t
C
d(OFF)
I
I
G
V
D(ON)
DS(ON)
d(ON)
GS(th)
GSS
DSS
DS(ON)
t
OSS
RSS
t
D
GS(th)
t
ISS
SD
rr
DSS
FS
r
f
(continuous) is limited by max rated T
OUTPUT
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
INPUT
Package
TO-92
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage
Zero Gate voltage drain current
ON-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Parameter
Supertex inc.
VDD
10V
0V
0V
10%
GS(th)
DS(ON)
t
d(ON)
with temperature
10%
t
with temperature
(ON)
(continuous)
90%
t
(mA)
350
r
I
j
D
1235 Bordeaux Drive, Sunnyvale, CA 94089
.
O
(T
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
A
= 25
†
O
90%
C unless otherwise specified)
t
d(OFF)
(pulsed)
t
(OFF)
2.0
(A)
I
D
t
90%
f
10%
Power Dissipation
2
0.75
Min
100
225
0.6
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@T
C
(W)
1.0
= 25
Typ
-3.2
400
400
3.4
1.6
0.6
4.0
2.0
3.0
6.0
3.0
1.4
2.0
1.0
50
25
-
-
-
-
-
O
C
Generator
Tel: [phone]
Max
-5.0
100
500
Pulse
2.0
4.5
3.0
1.1
8.0
5.0
5.0
7.0
6.0
1.5
10
60
35
-
-
-
-
-
INPUT
R
GEN
mV/
mmho V
(
Units
%/
O
125
C/W)
θ
µA
µA
nA
pF
ns
ns
Ω
V
V
A
V
jc
O
O
C
C V
V
V
V
V
V
ing, T
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
Conditions
D
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
GEN
www.supertex.com
(
= 1.0A,
O
170
C/W)
θ
= 0V, I
= V
= V
= ± 20V, V
= 0V, V
= 0V, V
= 5.0V, V
= 10V, V
= 4.5V, I
= 10V, I
= 10V, I
= 25V, I
= 0V,
= 25V,
= 25V,
= 0V, I
= 0V, I
ja
= 25Ω
A
= 125°C
DS
DS
, I
, I
D
SD
SD
V
R
D
D
DS
DS
D
D
D
DD
= 1.0mA
= 0.5mA
= 1.0mA
L
D
DS
(mA)
= 500mA
= 500mA
350
DS
= 500mA
I
= 500mA
= 500mA
= Max Rating
= 0.8 Max Rat-
= 250mA
DR
DS
D.U.T.
= 25V
= 25V
OUTPUT
†
= 0V
TN0110
I
2.0
(A)
DRM