TN0110N3-P002-G Supertex, TN0110N3-P002-G Datasheet

TN0110N3-P002-G

Manufacturer Part Number

TN0110N3-P002-G

Description

MOSFET 100V 3Ohm

Manufacturer

Supertex

Datasheet

1.TN0110N3-P002-G.pdf (5 pages)

Specifications of TN0110N3-P002-G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

2 A

Resistance Drain-source Rds (on)

3 Ohms

Mounting Style

Through Hole

Package / Case

TO-92

Power Dissipation

1 W

Factory Pack Quantity

2000

Current page: 1 of 5
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Features

►

Applications

►

For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).

Refer to Die Specification VF15 for layout and dimensions.

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Supertex inc.

Ordering Information

Product Summary

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

TN0110N3-G

Low threshold - 2.0V max.

High input impedance

Low input capacitance - 50pF typical

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

TN0110

Device

Supertex inc.

DSS

100

(V)

TN0110N3-G

/BV

Package

TO-92

DGS

(max)

3.0

DS(ON)

(Ω)

N-Channel Enhancement-Mode

Vertical DMOS FET

1235 Bordeaux Drive, Sunnyvale, CA 94089

-55

(min)

D(ON)

2.0

(A)

C to +150

(Die in wafer form)

TN1510NW

(max)

Value

2.0

GS(th)

(V)

±20V

DGS

DSS

General Description

This low threshold, enhancement-mode (normally-off) transistor

utilizes a vertical DMOS structure and Supertex’s well-proven,

silicon-gate manufacturing process. This combination produces a

device with the power handling capabilities of bipolar transistors

and the high input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS structures,

this device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Pin Configurations

Product Marking

Package may or may not include the following marks: Si or

Wafer / Die Options

(Die on adhesive tape)

Y Y W W

0 1 1 0

SiT N

Tel: 408-222-8888

TN1510NJ

SOURCE

YY = Year Sealed

WW = Week Sealed

TO-92 (N3)

= “Green” Packaging

www.supertex.com

DRAIN

GATE

(Die in waffle pack)

TN1510ND

TN0110

Related parts for TN0110N3-P002-G

TN0110N3-P002-G Summary of contents

Page 1

... R BV /BV DS(ON) Device DSS DGS (max) (V) (Ω) TN0110N3-G 100 3.0 Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability ...

Page 2

... Reverse recovery time rr Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 10 (ON) t d(ON) VDD 10% OUTPUT 0V 90% Supertex inc Power Dissipation D D † (pulsed (mA) (A) (W) 350 2.0 1 unless otherwise specified) ...

Page 3

... Typical Performance Curves Output Characteristics 5.0 4.0 3.0 2.0 1 (volts) DS Transconductance vs. Drain Current 0.5 0.4 0.3 0.2 0 0.6 1.2 I (amperes) D Maximum Rated Safe Operating Area TO-92 (pulsed) 1.0 TO-92 (DC) 0.1 0.01 1 (volts) DS Supertex inc. 5.0 4 10V GS 3.0 8V 2 150 1 25V DS 0 1.8 2.4 3.0 1.0 0.8 0.6 ...

Page 4

... Transfer Characteristics 3 25V DS 2.4 1.8 1.2 0 2.0 4.0 V (volts) GS Capacitance vs. Drain-to-Source Voltage 100 f = 1.0MHz (volts) DS Supertex inc. (cont.) 100 150 150 C O 6.0 8 ISS C OSS C RSS 30 40 1235 Bordeaux Drive, Sunnyvale, CA 94089 4 On-Resistance vs. Drain Current 5 ...

Page 5

... This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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