BUK9675-100A /T3 NXP Semiconductors, BUK9675-100A /T3 Datasheet - Page 9

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BUK9675-100A /T3

Manufacturer Part Number
BUK9675-100A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK9675-100A /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
23 A
Resistance Drain-source Rds (on)
0.072 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
57 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
98 W
Rise Time
120 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
58 ns
Part # Aliases
BUK9675-100A,118
NXP Semiconductors
8. Revision history
Table 7.
BUK9675-100A
Product data sheet
Document ID
BUK9675-100A v.4
Modifications:
BUK9675-100A v.3
Revision history
Release date
20110419
20110328
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 04 — 19 April 2011
Change notice
-
-
N-channel TrenchMOS logic level FET
BUK9675-100A
Supersedes
BUK9675-100A v.3
BUK9575_9675-100A v.2
© NXP B.V. 2011. All rights reserved.
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