SUM60N04-12LT-E3 Vishay/Siliconix, SUM60N04-12LT-E3 Datasheet - Page 8

• Manufacturer Part Number: SUM60N04-12LT-E3
• Description: MOSFET 40V 60A 110W
• Manufacturer: Vishay/Siliconix

Specifications of SUM60N04-12LT-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Resistance Drain-source Rds (on): 9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK-5
• Fall Time: 20 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.75 W
• Rise Time: 70 ns
• Factory Pack Quantity: 800
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 35 ns

SUM60N04-12LT
Vishay Siliconix
The bias current of 250 µA nominal is derived from the input
signal. In this manner, a simple comparator can be used as
a driver for normal on/off operation and a fault detector
circuit. The circuit used to provide the input signal must
therefore be able to source 0.25 mA with no significant
voltage drop.
The LMV321 can provide a output current of 60 mA typical,
which provides reasonable switching time for non-PWM
applications. A 560 Ω resistor is added in series to protect the
op amp and to prevent instability, but will result in switching
times of several micro seconds. A lower value may be
possible depending on layout, but may violate conditions
recommended by the op amp manufacturer.
Hysteresis is added by means of a resistor network around
the comparator. Approximately 40 °C hysteresis is added
using the components shown. This hysteresis could be
reduced if necessary by increasing the value of R4. Another
means of implementing hysteresis is to use the output of the
comparator to provide some of the bias current for the
sensing diode. When the comparator output is low (tripped/
off), the bias current is reduced by, say, 150 µA, causing the
forward voltage to drop by around 50 mV. This concept
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
8
+ 5 V
http://www.vishay.com/ppg?71620.
0.1 µF
C2
R3, 18 kΩ
180 kΩ
22 kΩ
Signal Ground
1 %
1 %
R1
R2
560 pF
IC1, LMV331
C1
R6
10 kΩ
1%
0.1 µF
C3
R4, 560 kΩ, 1 %
-
+
Figure 2.
R5
10 kΩ
would also allow a lower sourcing capability in the logic
circuit providing the on/off signal and therefore should be
used if input current requirements become a problem.
With the input high, bias current flows and as long as the
forward voltage of the diode is higher than 0.465 V, the
comparator output is high and the MOSFET is on. If the
forward voltage of the diode drops below 0.465 V, the
comparator output goes low and the MOSFET is turned off.
The gate drive voltage can also be used as an output signal
(if required) for logic to interpret and to signify that there is a
fault. Note the cathode of the sensing diode should NOT be
connected directly to the source of the MOSFET as the noise
introduced by high currents in the source loop could affect
operation of the sensing circuit. A separate signal ground
should be used and connect to power ground at one point
only.
A variation on this schematic is shown in Figure 2. Here a low
cost comparator (again in a SOT-23 or SC-70) is used to
provide a fault output signal only. The diode bias current is
taken from the 5 V. In this manner the diode bias is applied
at all times, so the noise filtering capacitor, C1 will not
introduce a turn-on delay. The fault output signal could be
used to enable the gate driver as shown, or fed to larger
monitoring circuit to shutdown the MOSFET.
ENABLE
IN
DRIVER
S-80272-Rev. C, 11-Feb-08
Document Number: 71620
Power Ground