SUM60N04-12LT Vishay Siliconix, SUM60N04-12LT Datasheet

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SUM60N04-12LT

Manufacturer Part Number
SUM60N04-12LT
Description
N-Channel MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
The SUM60N04-12LT is a 40-V n-channel, 15-mW logic level
MOSFET in a 5-lead D
Vishay Siliconix proprietary high-cell density TrenchFET
technology.
Document Number: 71620
S-03830—Rev. A, 28-May-01
D Temperature-Sense Diodes for Thermal Shutdown
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D ESD Protected: 2000 V
D Logic-Level Low On-Resistance
D Avalanche Rated
D Low Gate Charge
D Fast Turn-On Time
D 5-Lead D
Package Limited
V
(BR)DSS
40
TO-263, 5 Leads
Temperature Sensing MOSFET, N-Channel 40-V (D-S)
2
PAK
(V)
G
1
T
D
2
1
2
Pak
D
3
T
4
2
S
5
0.012 @ V
0.009 @ V
r
DS(on)
2
PAK package built on the
GS
GS
(W)
= 4.5 V
= 10 V
I
D
60
60
(A)
New Product
a
G
N-Channel MOSFET
Two anti-parallel electrically isolated poly-silicon diodes are
used to sense the temperature changes in the MOSFET.
The gate of the MOSFET is protected from high voltage
transients by two back-to-back poly-silicon zener diodes.
D Automotive
D Industrial
D
S
T
T
1
2
D
1
SUM60N04-12LT
Vishay Siliconix
D
2
www.vishay.com
1

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SUM60N04-12LT Summary of contents

Page 1

... D Low Gate Charge D Fast Turn-On Time D 5-Lead D 2 PAK V (V) r (BR)DSS DS(on) 0.009 @ V 40 0.012 @ V Notes a. Package Limited The SUM60N04-12LT is a 40-V n-channel, 15-mW logic level MOSFET in a 5-lead D Vishay Siliconix proprietary high-cell density TrenchFET technology Pak TO-263, 5 Leads ...

Page 2

... SUM60N04-12LT Vishay Siliconix Drain-Source Voltage Gate-Source Voltage V Clamp Current GS Continuous Drain Current (T = 175_C) J Avalanche Current Repetitive Avalanche Energy Source-to-Anode Voltage Source-to-Cathode Voltage a Maximum Power Dissipation Operating Junction and Storage Temperature Range d Junction-to-Ambient Junction-to-Case Notes: a. Package limited. ...

Page 3

... D D GEN GEN 25_C di/dt = 100 A/ SUM60N04-12LT Vishay Siliconix Min Typ Max "250 1 50 250 0.0075 0.009 0.0135 0.018 0.0095 0.012 675 735 675 735 1920 ...

Page 4

... SUM60N04-12LT Vishay Siliconix Output Characteristics 250 thru 200 150 100 – Drain-to-Source Voltage (V) DS Transconductance – Drain Current (A) D Capacitance 3000 2500 2000 1500 1000 C rss 500 – Drain-to-Source Voltage (V) DS www ...

Page 5

... I ( 25_C AV J 0.01 0 (Sec 250 125 100 125 150 175 SUM60N04-12LT Vishay Siliconix Source-Drain Diode Forward Voltage 100 T = 150_C 25_C 0.3 0.6 0.9 1.2 V – Source-to-Drain Voltage (V) SD Drain-Source Breakdown vs. Junction Temperature ...

Page 6

... SUM60N04-12LT Vishay Siliconix 10 1 –1 10 –2 10 –3 10 –4 10 –5 10 –6 10 – Maximum Avalanche and Drain Current vs. Case Temperature – Case Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 –5 10 www.vishay.com 6 New Product Gate-Source Voltage vs. Gate Current I (mA) @ 150_C ...

Page 7

... V C2 0 INPUT The SUM60N04-12LT provides a non-committed diode to allow temperature sensing of the actual MOSFET chip. The addition of one simple comparator and a few other components is all that is required to implement a temperature protected MOSFET. Since it has a very tight tolerance on forward voltage, the forward voltage of the diode can be used to provide to shutdown signal ...

Page 8

... SUM60N04-12LT Vishay Siliconix The bias current of 250-mA nominal is derived from the input signal. In this manner, a simple comparator can be used as a driver for normal on/off operation and a fault detector circuit. The circuit used to provide the input signal must therefore be able to source 0.25 mA with no significant voltage drop. ...

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