PSMN005-30K /T3 NXP Semiconductors, PSMN005-30K /T3 Datasheet - Page 5

• Manufacturer Part Number: PSMN005-30K /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN005-30K /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 45 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.5 W
• Rise Time: 16 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 65 ns
• Part # Aliases: PSMN005-30K,518

NXP Semiconductors
6. Characteristics
Table 6.
PSMN005-30K
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
g
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
transfer conductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
I
T
V
T
V
R
V
I
see
I
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
S
S
j
j
DS
DS
GS
GS
GS
GS
DS
DS
DS
DS
G(ext)
= 25 °C; see
= 25 °C; see
= 15 A; V
= 10 A; dI
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 20 A; V
Figure 8
Figure 8
Figure 8
Figure
Figure
Figure 13
= 30 V; V
= 30 V; V
= 25 V; V
= 15 V; R
= 15 V; I
= 25 V; T
= 20 V; V
= -20 V; V
= 4.5 V; I
= 10 V; I
= 6 Ω; T
Rev. 2 — 22 December 2011
9; see
9; see
GS
DS
S
DS
DS
DS
D
D
/dt = -100 A/µs; V
D
j
GS
GS
GS
DS
L
GS
DS
= 20 A; T
= 25 °C
= 15 A; T
= 15 V; V
= 0 V; T
j
= V
= V
= V
= 13 A; T
Figure 11
Figure 12
= 15 Ω; V
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
Figure 10
Figure 10
GS
GS
GS
; T
; T
; T
j
N-channel TrenchMOS SiliconMAX logic level FET
= 25 °C;
j
j
j
j
j
GS
j
j
j
j
= 150 °C;
= -55 °C;
= 25 °C;
GS
= 25 °C
= 25 °C;
j
j
= 25 °C;
= 25 °C
= 150 °C
= 25 °C
= 25 °C
= 25 °C
= 4.5 V;
= 10 V;
GS
= 0 V;
PSMN005-30K
Min
30
0.5
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
6.6
4.4
34
15
14
3100
605
405
18
16
65
45
60
0.81
35
20
© NXP B.V. 2011. All rights reserved.
Max
-
-
3.4
3
1
0.5
100
100
8
5.5
-
-
-
-
-
-
-
-
-
-
-
1.3
-
-
V
mA
mΩ
nC
pF
ns
ns
ns
nC
Unit
V
V
V
µA
nA
nA
mΩ
nC
nC
pF
pF
ns
S
V
ns
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