VS-VSKTF180-12HJP Vishay Semiconductors, VS-VSKTF180-12HJP Datasheet - Page 5

• Manufacturer Part Number: VS-VSKTF180-12HJP
• Description: SCR Modules 180 Amp 1200 Volt 400 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-VSKTF180-12HJP

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 400 A
• Non Repetitive On-state Current: 7130 A
• Breakover Current Ibo Max: 7470 A
• Rated Repetitive Off-state Voltage Vdrm: 1.2 kV
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• On-state Voltage: 1.84 V
• Holding Current (ih Max): 600 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 200 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: MAGN-A-PAK
• Circuit Type: Thyristors / Thyristors
• Current Rating: 180 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 2

Document Number: 93685
Revision: 19-Jul-10
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
Fig. 7 - On-State Voltage Drop Characteristics
6500
6000
5500
5000
4500
4000
3500
3000
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
2500
1000
Nu m b er O f E qu a l Am plitu d e Half C yc le C u r re nt Pu lse s (N)
100
. 0
1
1 0
1
VSK.F18 0.. S eries
Pe r Jun ctio n
VSK.F180.. Series
Pe r Jun ctio n
In sta n ta n e o us O n -sta te V olta g e (V )
A t A ny Rate d Loa d C o nd itio n A nd W ith
Rate d V
M a xim um No n Rep etitiv e Surg e C urrent
O f C o nduction May Not Be Maintained.
2
Vers us Pulse Tra in D ura tio n . C ontro l
Pu lse Train D uration (s)
R RM
3
[e-mail], [e-mail],
A p plie d Fo llo w ing Surg e .
T = 25 °C
T = 12 5 °C
For technical questions within your region, please contact one of the following:
N o V o lta g e R e a p p lie d
Ra te d V
Fast Thyristor/Diode and Thyristor/Thyristor
J
J
0 1
0
4
1 .
VSK.F1 80.. Series
Per Ju n ctio n
(MAGN-A-PAK Power Modules), 180 A
@ 60 H z 0.0083 s
@ 50 H z 0.0100 s
In itial T = 125 °C
In itial T = 125 °C
RR M
5
R e a pp lie d
J
J
6
1
0 0
1
7
Fig. 10 - Reverse Recovery Current Characteristics
Fig. 9 - Reverse Recovery Charge Characteristics
Fig. 8 - Thermal Impedance Z
0.001
[e-mail]
0.01
320
300
280
260
240
220
200
180
160
140
120
100
180
160
140
120
100
0.1
80
80
60
40
20
Ra te O f Fa ll O f Fo rw a rd C urre n t - d i/d t (A/μs)
Rate O f Fall O f Fo rw a rd C urren t - d i/dt (A/μs)
0.001
1
10
10
Ste a dy Sta te V a lue:
R
(D C O p eratio n)
thJ C
20
20
Sq u are W a ve Pulse D ura tio n (s)
0.01
= 0.125 K/W
30
30
I
TM
Vishay Semiconductors
VSK.F180..P Series
I
40
TM
40
= 1000 A
= 1000A
0.1
500 A
300 A
200 A
100 A
50
50
5 00A
3 00A
2 00A
1 00A
60
60
VSK.F 180.. Se ries
T = 125 °C
VSK.F180 .. Series
Per Junctio n
J
VSK.F180.. Series
T = 125 °C
1
J
thJC
70
70
Characteristics
80
80
10
90 100
90 100
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100
5