VS-VSKTF180-12HJP Vishay Semiconductors, VS-VSKTF180-12HJP Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/6/698/vishay_semiconductors_sml.jpg)
VS-VSKTF180-12HJP
Manufacturer Part Number
VS-VSKTF180-12HJP
Description
SCR Modules 180 Amp 1200 Volt 400 Amp IT(RMS)
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-VSKTF180-12HKP.pdf
(11 pages)
Specifications of VS-VSKTF180-12HJP
Product Category
SCR Modules
Rohs
yes
On-state Rms Current (it Rms)
400 A
Non Repetitive On-state Current
7130 A
Breakover Current Ibo Max
7470 A
Rated Repetitive Off-state Voltage Vdrm
1.2 kV
Off-state Leakage Current @ Vdrm Idrm
50 mA
On-state Voltage
1.84 V
Holding Current (ih Max)
600 mA
Gate Trigger Voltage (vgt)
3 V
Gate Trigger Current (igt)
200 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
Chassis
Package / Case
MAGN-A-PAK
Circuit Type
Thyristors / Thyristors
Current Rating
180 A
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
2
VSK.F180..P Series
Vishay Semiconductors
Note
• Table shows the increment of thermal resistance R
www.vishay.com
4
CONDUCTIONS ANGLE
R
thJC
130
120
110
100
130
120
110
100
CONDUCTION
180°
120°
90
80
70
60
90
80
70
60
90°
60°
30°
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
0
0
Averag e O n-state C urren t (A)
Averag e O n -state C urren t (A )
50
40
3 0°
VSK.F1 8 0 .. Se ries
R
100
30°
thJC
6 0°
VSK.F180.. Series
R
thJC
80
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
9 0°
SINUSOIDAL CONDUCTION
(D C ) = 0 .1 2 5 K /W
For technical questions within your region, please contact one of the following:
150
60°
(DC) = 0.125 K/W
1 2 0°
C o n d u c tio n Pe rio d
C o n d u ctio n A n g le
120
90°
1 80°
200
120°
160
0.009
0.010
0.014
0.020
0.032
Fast Thyristor/Diode and Thyristor/Thyristor
250
D C
180°
(MAGN-A-PAK Power Modules), 180 A
300
200
thJC
when devices operate at different conduction angles than DC
RECTANGULAR CONDUCTION
0.006
0.011
0.015
0.020
0.033
DiodesEurope@vishay.com
350
300
250
200
150
100
450
400
350
300
250
200
150
100
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
50
50
0
0
0
0
RM S Lim it
20
RM S Lim it
A ve ra g e O n-sta te C urre n t (A)
A verag e O n-sta te C urre n t (A )
50
180°
120°
40
D C
90°
60°
30°
1 80°
1 20°
TEST CONDITIONS
100
90°
60°
30°
60
T
80 100 120 140 160 180
J
VSK.F18 0.. Series
150
= 125 °C
VSK.F1 80 .. Series
C on d u c tio n Pe riod
Per Junction
T = 12 5 °C
C ond uctio n An gle
J
Per Ju n ction
T = 1 25 °C
J
200
Document Number: 93685
250
Revision: 19-Jul-10
300
UNITS
K/W