VS-VSKTF180-12HJP Vishay Semiconductors, VS-VSKTF180-12HJP Datasheet

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VS-VSKTF180-12HJP

Manufacturer Part Number
VS-VSKTF180-12HJP
Description
SCR Modules 180 Amp 1200 Volt 400 Amp IT(RMS)
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-VSKTF180-12HJP

Product Category
SCR Modules
Rohs
yes
On-state Rms Current (it Rms)
400 A
Non Repetitive On-state Current
7130 A
Breakover Current Ibo Max
7470 A
Rated Repetitive Off-state Voltage Vdrm
1.2 kV
Off-state Leakage Current @ Vdrm Idrm
50 mA
On-state Voltage
1.84 V
Holding Current (ih Max)
600 mA
Gate Trigger Voltage (vgt)
3 V
Gate Trigger Current (igt)
200 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
Chassis
Package / Case
MAGN-A-PAK
Circuit Type
Thyristors / Thyristors
Current Rating
180 A
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
2
ELECTRICAL SPECIFICATIONS
Document Number: 93685
Revision: 19-Jul-10
PRODUCT SUMMARY
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
I
I
I
I
t
t
V
T
VOLTAGE RATINGS
TYPE NUMBER
VSK.F180-
T(AV)
T(RMS)
TSM
2
2
q
rr
J
DRM
t
t
/V
RRM
Type
I
T(AV)
VOLTAGE
CODE
Fast Thyristor/Diode and Thyristor/Thyristor
08
12
MAGN-A-PAK
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
(MAGN-A-PAK Power Modules), 180 A
For technical questions within your region, please contact one of the following:
V
RRM
T
50 Hz
60 Hz
50 Hz
60 Hz
Range
Modules - Thyristor, Fast
C
PEAK REVERSE VOLTAGE
/V
DRM
CHARACTERISTICS
, MAXIMUM REPETITIVE
180 A
1200
800
V
FEATURES
• Fast turn-off thyristor
• Fast recovery diode
• High surge capability
• Electrically isolated baseplate
• 3000 V
• Industrial standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
DESCRIPTION
These series of MAGN-A-PAK modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and others
where fast switching characteristics are required.
V
RSM
PEAK REVERSE VOLTAGE
, MAXIMUM NON-REPETITIVE
- 40 to 125
800/1200
VALUES
RMS
DiodesEurope@vishay.com
20/25
7130
7470
2550
180
400
255
232
85
2
isolating voltage
1200
800
V
Vishay Semiconductors
VSK.F180..P Series
I
RRM
UNITS
kA
AT T
kA
/I
°C
μs
°C
A
A
V
2
DRM
2
s
www.vishay.com
s
J
mA
50
= 125 °C
MAXIMUM
1

Related parts for VS-VSKTF180-12HJP

VS-VSKTF180-12HJP Summary of contents

Page 1

... CHARACTERISTICS - 40 to 125 , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE DRM RSM PEAK REVERSE VOLTAGE V 800 1200 VSK.F180..P Series Vishay Semiconductors isolating voltage RMS VALUES UNITS 180 A 85 °C 400 7130 A ...

Page 2

... VSK.F180..P Series Vishay Semiconductors CURRENT CARRYING CAPABILITY FREQUENCY 50 Hz 400 Hz 2500 Hz 5000 Hz 10 000 Hz Recovery voltage V r Voltage before turn- Rise of on-state current dl/dt Case temperature Equivalent values for RC circuit ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS current ...

Page 3

... A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is not recommended, busbar should be used and restrained during tightening. Threads must be lubricated with a compound. DiodesEurope@vishay.com VSK.F180..P Series Vishay Semiconductors VALUES UNITS ...

Page 4

... Averag -state C urren Fig Current Ratings Characteristics 130 VSK. ries thJC 120 110 tio n Pe rio d 100 90 3 0° 6 0° 0° ...

Page 5

... In itial T = 125 ° 0.0083 0.0100 s 5500 5000 4500 4000 3500 VSK.F18 0.. S eries Pe r Jun ctio n 3000 plitu d e Half lse s (N) Fig Maximum Non-Repetitive Surge Current 7500 ...

Page 6

... Pulse Base (μs) 1E4 40 0 1E3 1E2 VSK .F1 80.. Se rie s Tra p ezoid ulse °C d i/d t 50A/μ 1E1 1E1 1E2 Pulse Basewidth (μs) www.vishay.com For technical questions within your region, please contact one of the following: 6 DiodesAmericas@vishay ...

Page 7

... Power Modules), 180 A 1E4 1E3 1E2 VSK.F 180.. Series Sinuso ulse tp 1E1 1E1 1E2 Pulse Base (μs) Fig Maximum On-State Energy Power Loss Characteristics 100 Recta lar lse ...

Page 8

... VSK.F180..P Series Vishay Semiconductors ORDERING INFORMATION TABLE Device code VSK Note • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION Two SCRs common cathodes SCR/diode common cathodes Two SCRs common anodes www.vishay.com For technical questions within your region, please contact one of the following: 8 DiodesAmericas@vishay ...

Page 9

... SCR/diode doubler circuit, positive control Dimensions Document Number: 93685 For technical questions within your region, please contact one of the following: Revision: 19-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, CIRCUIT CONFIGURATION CODE LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95086 DiodesEurope@vishay.com VSK.F180..P Series Vishay Semiconductors CIRCUIT DRAWING VSKNF VSKLF ...

Page 10

... Full engineering drawings are available on request • UL identification number for gate and cathode wire: UL 1385 • UL identification number for package V-0 Document Number: 95086 Revision: 03-Aug-07 MAGN-A-PAK 35 (1.38) 80 (3.15) 9 (0.35) 115 (4.53) HEX 13 92 (3.62) For technical questions, contact: indmodules@vishay.com Outline Dimensions Vishay Semiconductors Ø 5.5 28 (1.12) 6 (0.24) www.vishay.com 1 ...

Page 11

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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