VS-ST180S12P0V Vishay Semiconductors, VS-ST180S12P0V Datasheet - Page 6

• Manufacturer Part Number: VS-ST180S12P0V
• Description: SCRs 1200 Volt 200 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST180S12P0V

• Product Category: SCRs
• Breakover Current Ibo Max: 5230 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 150 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-93
• Factory Pack Quantity: 12

ST180SPbF Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
6
Dimensions
Device code
100
0.1
10
0.001
Note: For metric device M16 x 1.5 contact factory
1
1
2
3
4
5
6
7
8
9
ST
Rec tangular gate pulse
a) Recommended load line for
b) R ec ommended load line for
1
tr<=1 µs
<=30% rated di/ dt : 10V, 10ohms
rated di/ dt : 20V, 10ohms; tr<=1 µs
-
-
-
-
-
-
-
-
-
For technical questions, contact: [e-mail]
18
2
VGD
Thyristor
Essential part number
0 = Converter grade
S = Compression bonding stud
Voltage code x 100 = V
P = Stud base 3/4"-16UNF2A threads
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
V = Glass-metal seal (only up to 1200 V)
Lead (Pb)-free
None = Ceramic housing (over 1200 V)
0.01
IGD
LINKS TO RELATED DOCUMENTS
Phase Control Thyristors
0
3
(Stud Version), 200 A
Device: S T 180S S eries
Instantaneous Gate Current (A)
S
Fig. 9 - Gate Characteristics
4
0.1
20
(b)
5
RRM
(a)
(see Voltage Ratings table)
P
6
1
F requency Limited by PG(AV)
0
7
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
http://www.vishay.com/doc?95082
8
-
10
(1)
PbF
(2)
9
(3)
(4)
100
Document Number: 94397
Revision: 11-Aug-08